https://doi.org/10.1051/epjpv/2024031
Original Article
Preliminary study of selective contacts for hot carrier solar cells
1
Université de Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, 35000 Rennes, France
2
IPVF SAS, UMR IPVF 9006, CNRS, Ecole Polytech, Inst Polytech Paris, PSL
Chim, 91120 Palaiseau, France
3
Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol C2N, 91120 Palaiseau, France
4
LPCNO, INSA CNRS UPS, 135 Ave Rangueil, 31077 Toulouse, France
* e-mail: soline.boyer@insa-rennes.fr
Received:
15
March
2024
Accepted:
4
September
2024
Published online: 19 November 2024
Hot carrier solar cells are a concept of photovoltaic devices, which offers the opportunity to harvest solar energy beyond the Shockley-Queisser limit. Unlike conventional photovoltaic devices, hot carrier solar cells convert excess kinetic energy into useful electrical power rather than losing it through thermalisation mechanisms. To extract the carriers while they are still “hot”, efficient energy-selective contacts must be developed. In previous studies, the presence of the hot carrier population in a p-i-n solar cell based on a single InGaAsP quantum well on InP substrate at room temperature has been demonstrated by means of complementary optical and electrical measurements, leading to an operating condition for this device beyond the limit for classical device operation. This result allows to design a new generation of devices to increase the hot carrier conversion contribution. In this work, we study InGaAs/AlInAs type II heterojunction as a selective contact for a future hot carrier solar cell device epitaxially grown on (001) oriented InP substrate. Two p-i-n solar cells have been grown by molecular beam epitaxy on InP. The absorber is a 50 nm-thick InGaAs layer surrounded by AlInAs barriers, all lattice-matched to InP. Two architectures are compared, the first with two symmetrical AlInAs barriers and the second with a single InGaAs quantum well in the center of the n-side barrier to allow electron tunneling across the barrier. Electrical characteristics under laser illumination with two different wavelengths have been measured to investigate the effect of the selective contact compared to the barrier. This preliminary study of InGaAs/AlInAs-based selective contacts show that such III–V combination is adapted for a future hot carrier solar cell in the InP technology.
Key words: Hot carrier solar cells / III-V quantum well / selective contact / InP
© S. Boyer-Richard et al., Published by EDP Sciences, 2024
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
