Edge passivation of shingled poly-Si/SiOx passivated contacts solar cells
Univ. Grenoble Alpes, CEA, Liten, Campus Ines, 73375 Le Bourget du Lac, France
2 Aix Marseille Université, Université de Toulon, CNRS, IM2NP, Marseille, France
* e-mail: firstname.lastname@example.org
Received in final form: 11 May 2023
Accepted: 2 June 2023
Published online: 6 July 2023
This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiOx passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlOx) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of shingled cells cut by using the innovative “45° tilt squaring approach”. The whole procedure featuring high-temperature AlOx annealing led to very low cut-related performance losses. Indeed, the efficiency and FF of the passivated shingled cells surpassed the values obtained for the as-cut shingles by 0.5%abs and 2.6%abs, respectively. Approaches for further improvements are also discussed, particularly to overcome the short-circuit current density decrease observed for passivated shingles.
Key words: Shingle solar cell / passivated contacts / edge passivation / AlOx / high temperature
© F. Dhainaut et al., Published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.