https://doi.org/10.1051/epjpv/2020004
Regular Article
Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells
Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
* e-mail: saifulslm6@gmail.com
Received:
11
September
2019
Received in final form:
15
January
2020
Accepted:
7
April
2020
Published online: 9 July 2020
The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO2 together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collection efficiency at the n-Si/cathode interface. The transient reverse recovery characterization revealed that the surface recombination velocity S was ∼375 cm/s for double TiO2 interlayer of ∼2 nm thickness. This value was almost the same as that determined by microwave photoconductance decay measurement. These findings suggest that solution-processed TiO2 has potential as a hole blocking layer for the crystalline Si photovoltaics.
Key words: Hole blocking layer / TiO2 / surface recombination velocity / transient reverse recovery
© Md.E. Karim et al., published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
