https://doi.org/10.1051/epjpv/2018009
Regular Article
Beneficial impact of a thin tunnel barrier in quantum well intermediate-band solar cell
1
Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334,
13397
Marseille, France
2
NextPV, LIA, CNRS-RCAST/U, Tokyo-U, Bordeaux,
Tokyo
153-8904, Japan
3
Research Center for Advanced Science and Technology, The University of Tokyo,
Tokyo
153-8904, Japan
4
LIMMS, CNRS-Institute of Industrial Science, UMI 2820, University of Tokyo,
Tokyo
153-8505, Japan
5
IRDEP, UMR 7174 CNRS EDF Chimie ParisTech, EDF R&D,
Chatou, France
* e-mail: nicolas.cavassilas@im2np.fr
Received:
25
July
2018
Received in final form:
16
October
2018
Accepted:
19
October
2018
Published online: 30 November 2018
Based on electronic quantum transport modeling, we study the transition between the intermediate-band and the conduction-band in nano-structured intermediate-band solar cell. We show that a tunnel barrier between the quantum well (QW) and the host material could improve the current. The confinement generated by such a barrier favors the inter-subband optical coupling in the QW and then changes the excitation-collection trade-off. More surprisingly, we also show that tunneling impacts the radiative recombination and then the voltage. Using a detailed balance model we explain and we propose a broadening factor for this Voc modification. Finally we show that a thin tunnel barrier is beneficial for both current and voltage.
Key words: intermediate band solar cell / quantum modeling / quantum structures / intraband transition
© N. Cavassilas et al., published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
