Beneficial impact of a thin tunnel barrier in quantum well intermediate-band solar cell
Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334,
2 NextPV, LIA, CNRS-RCAST/U, Tokyo-U, Bordeaux, Tokyo 153-8904, Japan
3 Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan
4 LIMMS, CNRS-Institute of Industrial Science, UMI 2820, University of Tokyo, Tokyo 153-8505, Japan
5 IRDEP, UMR 7174 CNRS EDF Chimie ParisTech, EDF R&D, Chatou, France
* e-mail: email@example.com
Received in final form: 16 October 2018
Accepted: 19 October 2018
Published online: 30 November 2018
Based on electronic quantum transport modeling, we study the transition between the intermediate-band and the conduction-band in nano-structured intermediate-band solar cell. We show that a tunnel barrier between the quantum well (QW) and the host material could improve the current. The confinement generated by such a barrier favors the inter-subband optical coupling in the QW and then changes the excitation-collection trade-off. More surprisingly, we also show that tunneling impacts the radiative recombination and then the voltage. Using a detailed balance model we explain and we propose a broadening factor for this Voc modification. Finally we show that a thin tunnel barrier is beneficial for both current and voltage.
Key words: intermediate band solar cell / quantum modeling / quantum structures / intraband transition
© N. Cavassilas et al., published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.