https://doi.org/10.1051/epjpv/2017001
Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells
1 UMR FOTON CNRS 6082, INSA, 35708 Rennes, France
2 Institute of Chemistry, Casali Center for Applied Chemistry, The Hebrew University of Jerusalem, Edmond J. Safra Campus, Givat Ram, 91904 Jerusalem, Israel
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e-mail: jacky.even@insa-rennes.fr
Received: 30 September 2016
Accepted: 3 January 2017
Published online: 24 March 2017
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.
© Y. Huang et al., published by EDP Sciences, 2017
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