https://doi.org/10.1051/epjpv/2013027
UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H
1
Laboratoire des sciences de l’Ingénieur, de l’Informatique et de
l’Imagerie (ICUBE) UMR 7357, UdS/CNRS, 23 rue du Loess, BP 20 CR, 67037
Strasbourg Cedex 2,
France
2
IREPA-Laser Pole API – Parc d’innovation,
67400
Strasbourg,
France
3
Institut d’Électronique, de Microélectronique et de
Nanotechnologie (IEMN) UMR 8520, Université Lille 1 Sciences et
Technologies, CS
60069, 59652,
Villeneuve d’Ascq,
France
4
KMG Group, 45
avenue des États-Unis, 78035
Versailles,
France
5
Institut Lavoisier de Versailles UMR 8180, Université de
Versailles-St-Quentin en Yvelines, 45 avenue des États-Unis, 78000
Versailles,
France
6
CEA-INES, 50
avenue du Lac Léman, 73375
Le Bourget du Lac,
France
a
e-mail: tschutzk@gmail.com
Received: 24 July 2013
Accepted: 18 October 2013
Published online: 22 January 2014
Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration) but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration), however a-Si:H flakes and Al2O3 lace remain after ablation process.
© Schutz-Kuchly et al., published by EDP Sciences, 2014
This is an Open Access article distributed under the terms of the Creative
Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted
use, distribution, and reproduction in any medium, provided the original work is
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