Optical evaluation of doping concentration in SiO2 doping source layer for silicon quantum dot materials
The University of New South Wales, UNSW, Sydney, NSW
2 Institute of Semiconductor Electronic, RWTH Aachen University, Aachen, Germany
Received: 22 June 2011
Accepted: 16 August 2011
Published online: 29 September 2011
We have investigated and proposed a simple method to correlate optical absorption with high B doping concentrations in thin SiO2 films that offer a potential doping source for Si quantum dots. SiO2 films with boron and phosphorus were deposited using a computer controlled co-sputtering system. By assessing the absorption coefficients, it was observed that the doping can dramatically increase the absorption of the transparent SiO2. Additionally, the highly doped SiO2 films have a very broad Urbach like absorption tail and the absorption corresponds well with the doping level.
© EDP Sciences 2011
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