Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates
Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France
2 Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 75252 Paris, France
3 Institut Photovoltaïque d'Ile-de-France (IPVF), 30 Route départementale 128, 91120 Palaiseau, France
4 LPICM, CNRS, Ecole polytechnique, IP Paris, 91128 Palaiseau, France
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Received in final form: 19 December 2019
Accepted: 7 January 2020
Published online: 10 February 2020
Epitaxial silicon layers were grown on highly doped c-Si substrates using the plasma-enhanced chemical vapour deposition process (PECVD) at low temperature (175 °C). The transport and defect-related properties of these epi-Si layers were characterized by current density-voltage (J–V) and capacitance–voltage (C–V) techniques. The results show that the epi-Si layers exhibit a non-intentional n-type doping with a low apparent doping density of about 2 × 1015 cm−3. The admittance spectroscopy technique is used to investigate the presence of deep-level defects in the structure. An energy level at 0.2 eV below the conduction band has been found with a density in the range of 1015 cm−3 which may explain the observed apparent doping profile.
Key words: Capacitance–voltage / current–voltage / impurity profile / epitaxial Si
© C. Leon et al., published by EDP Sciences, 2020
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