Oxford, UK, 3-6 April 2017
Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
1 Helmholtz-Zentrum Berlin für
Materialien und Energie, Hahn-Meitner-Platz 1, 14109
2 Qatar Environment and Energy Research Institute and Hamad Bin Khalifa University, Education City, Doha, Qatar
3 Freie Universität Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin, Germany
a e-mail: email@example.com
Accepted: 27 January 2016
Published online: 26 February 2016
We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.
© Wang et al., published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.